page:p2-p1 mako semiconductor co., limited schottky diodes features fast switching speed for general purpose switching applications high conductance marking: maximum ratings (ta=25 unless otherwise noted) parameter symbol limit s unit reverse voltage v r 70 0 v forward current i f 200 0 0 ma peak forward surge current i fm(surge) 500 0 0 ma power dissipation p d 225 2 5 mw thermal resistance junction to ambient air r j a 556 5 6 /w junction temperature t j 150 5 0 storage temperature range t st g -55-150 50 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol min. typ. max. unit conditions reverse breakdown voltage v r 70 v i r =100 a forward voltage v f1 0.715 v i f =1ma v f2 0.855 v i f =10ma v f3 1 v i f =50ma v f4 1.25 v i f =150ma reverse current i r 2.5 a v r =70v capacitance between terminals c t 1.5 pf v r =0,f=1mhz reverse recovery time t rr 6 ns i f = i r = 10ma, irr= 0.1 x i r , r l = 100 ? baw56:a1 bav70:a4 bav99:a7 plastic- encapsulate diodes sot-23 baw56/bav70/bav99 m a k o s e m i c o n d u c t o r c o . , l i m i t e d h t t p : / / w w w . m a k o s e m i . h k /
p age:p2-p2 mako semiconductor co., limited typical characteristics plastic- encapsulate diodes baw56/bav70/bav99 m a k o s e m i c o n d u c t o r c o . , l i m i t e d h t t p : / / w w w . m a k o s e m i . h k /
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